Difference between revisions of "User talk:Seekic"
(New section: IDT54FCT646CTEB datasheet) |
(New section: PHP45NQ10T PHP3055 PHP3055E PHP30NQ15T datasheet ) |
||
Line 169: | Line 169: | ||
Data on the A or B data bus, or both, can be stored in the internal D flip-flops by LOW-to-HIGH transitions at the appropriate clock pins (CPAB or CPBA), regardless of the select or enable control pins. | Data on the A or B data bus, or both, can be stored in the internal D flip-flops by LOW-to-HIGH transitions at the appropriate clock pins (CPAB or CPBA), regardless of the select or enable control pins. | ||
The FCT26xxT have balanced drive outputs with current limiting resistors. This offers low ground bounce, minimal undershoot and controlled output fall times-reducing the need for external series terminating resistors. FCT2xxxT parts are plug-in replacements for FCTxxxT parts. | The FCT26xxT have balanced drive outputs with current limiting resistors. This offers low ground bounce, minimal undershoot and controlled output fall times-reducing the need for external series terminating resistors. FCT2xxxT parts are plug-in replacements for FCTxxxT parts. | ||
+ | |||
+ | == PHP45NQ10T PHP3055 PHP3055E PHP30NQ15T datasheet == | ||
+ | |||
+ | PHP45NQ10T PHP3055 PHP3055E PHP30NQ15T datasheet more detail check from | ||
+ | |||
+ | '''N-channel TrenchMOSÔ transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T''' | ||
+ | |||
+ | '''FEATURES''' | ||
+ | |||
+ | • ’Trench’ technology | ||
+ | • Very low on-state resistance | ||
+ | |||
+ | • Fast switching | ||
+ | • Low thermal resistance | ||
+ | |||
+ | '''GENERAL DESCRIPTION''' | ||
+ | N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. | ||
+ | '''Applications:-''' | ||
+ | • d.c. to d.c. converters | ||
+ | • switched mode power supplies | ||
+ | The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. | ||
+ | The PHB45NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. | ||
+ | The PHW45NQ10T is supplied in the SOT429 (TO247) conventional leaded package. |
Revision as of 17:54, 26 October 2008
hi everybody.I am majored in Electronic .Now I Want to share the electronic technical knowledge, we also discuss about it .
DO you know some integrated circuit models,and how to find their datasheet and pdf ,free download.Now some friends tell me a IC platform http://www.chinaicmart.com
There are many IC models in it ,eg: LM324 LM358 NBC3111 LM317 LM339 MAX232 78L05 NE555 TL431 7805 2SK1522 P521 DS18B20 TDA2030 S8050 PC817
If you want to download MAX232 datasheet and pdf ,you can click here http://www.chinaicmart.com/series-MAX/MAX232.html more and more detail contact with me dzsc028@hotmail.com
Hi Seekic,
An increasing number of your posts are entirely commercial in nature. In one instance, I have seen you replace a page of useful information with your own commercial posting.
This Wiki can't support that kind of traffic if it is going to be a successful source of information for this site's users.
Please refrain from posting what are essentially advertisements, and never replace other people's posts with your own, especially when it is purely commercial.
--Chazegh 13:42, 16 July 2008 (PDT)
Contents
- 1 IC electronic component CB55000
- 2 HC4316M HC4316A HC4316D datasheet and PDF
- 3 RH5RL42AA-TR datasheet and PDF
- 4 KM684002-17 datasheet description
- 5 IC electronic 0002
- 6 M27C512 datasheet
- 7 Microchip Technology 93LC66A
- 8 33793 33742 33742S 33887 33888 datasheet
- 9 3PMT75A 3PMT78A 3PMT8.0A 3PMT8.5A datasheet
- 10 VNV35N07 VNW35NV04 VNW100N04 VNW50N04 VOP0300B
- 11 NX8566LE811-CC NX8566LE862-CC NX8566LE820-BC NX8566LE6074-CC datasheet
- 12 2021-1310-00 2025-6001-06 2025-6002-10 datasheet
- 13 IDT54FCT646CTEB datasheet
- 14 PHP45NQ10T PHP3055 PHP3055E PHP30NQ15T datasheet
IC electronic component CB55000
To provide information and technique literatures for the enterprise like this IC electronic component CB55000 datasheet and pdf download: http://www.chinaicmart.com
1 GENERAL DESCRIPTION
The CB55000 standard cell series uses a high performance, low-voltage, 0.25 mm drawn (0.20 mm effective),six metal levels CMOS process HCMOS7 to a 90 pico-second internal delay while offering very low power dissipation and high noise immunity. With an average routed gate density of 30,000 gates/mm2, the CB55000 family allows the integration of up to 15 million equivalent gates and is ideal for high-complexity or high-performance devices for computer, telecommunication and consumer products. With a typical gate delay of 70 ps (for a 2-input NAND gate at fan-out 1), the library meets the most demanding speed requirements in telecommunication and computer application designs today. Optimized for 2.5 V operation, the library features a power consumption of less than 70 nW/Gate/MHz (fanout=1) and 30 nW/Gate/MHz (fan-out=1) at 1.8 V. The I/O buffers can be fully configured for both 2.5 V and 3.3 V interface options, with several high speed buffer types available. These include: low voltage differential (LVDS) I/Os, PCI/AGP, PECLs, and HSTL. The pad pitch down to 50 mm, in a staggered arrangement, meets the requirements of high pin-count devices which tend to become pad-limited at such library densities. For very high pin-count ICs, advanced packaging solutions such as Chip Scale Packaging in fine pitch BGA are available. New packaging solutions using a flip-chip approach are currently being developed.
HC4316M HC4316A HC4316D datasheet and PDF
HC4316M HC4316A HC4316D datasheet and PDF check: http://www.chinaicmart.com/series-HC4/HC4316A.html
The HC4316A is similar in function to the metal–gate CMOS MC14016 nd MC14066, and to the High–Speed CMOS HC4016A and HC4066A.
Each device has four independent switches. The device control and Enable nputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The device has been designed so that the ON resistances (R ) are much more linear over input voltage than ON R of metal–gate CMOS analog switches. Logic–level translators are ON rovided so that the On/Off V and V . When the Enable pin (active–low) is high.
RH5RL42AA-TR datasheet and PDF
RH5RL42AA-TR datasheet and PDF check from http://www.chinaicmart.com/series-RH5/RH5RL42AA-TR.html
OUTLINE The RH5RL Series are voltage regulator ICs with high accuracy output voltage and ultra-low quiescent current by CMOS process. Each of these ICs consists of a voltage reference unit, an error amplifier, a driver transistor, and resistors for setting output voltage. The output voltage is fixed with high accuracy. Three types of packages, TO-92, SOT-89 (Mini-power Mold), SOT-23-5 (Mini-mold), are available.
RH5RL42AA-RR RH5RL42AA-T1 RH5RL42AA-T2 RH5RL42AA-TL RH5RL42AA-TZ RH5RL52AA-RF RH5RL52AA-RR RH5RL52AA-T1
KM684002-17 datasheet description
ralated IC model M27C4002-12J1X M27C4002-12J6X M27C4002-12C6X M27C4002-12F KM684002-20 M38002-128 2025-6002-10 CM3002-15
http://www.chinaicmart.com/series-KM6/KM684002-17.html
GENERAL DESCRIPTION
The KM684002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The KM684002 uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using Samsung's advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM684002 is packaged in a 400 mil 36-pin plastic SOJ.
IC electronic 0002
0002 PDF download: http://www.chinaicmart.com/series-000/0002.html
The MSK 0002 is a general purpose current amplifier. It is the industry wide replacement for the LH0002. The device is ideal for use with an operational amplifier in a closed loop configuration to increase current output. The MSK 0002 is designed with a symmetrical output stage that provides low output impedances to both the positive and negative portions of output pulses. The MSK 0002 is packaged in a hermetic 8 lead low profile T0-5 header and is specified over the full military temperature range.
MIC49300-0.9BR HDSP-3600-00000 MIC49500-0.9WR HDSP-4600-00000 M27C2001-12C6X M27C2001-12N6X CY7C1001-12PC CY7C1001-12VC
M27C512 datasheet
M27C512 datasheet http://www.chinaicmart.com/series-M27/M27C512.html
SUMMARY DESCRIPTION The M27C512 is a 512 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for applications where fast turn-around and pattern experimentation are important requirements and is organized as 65536 by 8 bits. The FDIP28W (window ceramic frit-seal package) has transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27C512 is offered in PDIP28, PLCC32 and TSOP28 (8 x 13.4 mm) packages. In addition to the standard versions, the packages are also available in Lead-free versions, in compliance with JEDEC Std J-STD-020B, the ST ECOPACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive.
Microchip Technology 93LC66A
93LC66A datasheet and PDF check from
http://www.chinaicmart.com/series-93L/93LC66A.html
93LC66A DESCRIPTION
The Microchip Technology Inc. 93LC66A/B are 4K-bit, low voltage serial Electrically Erasable PROMs. The device memory is configured as x8 (93LC66A) or x16 bits (93LC66B). Advanced CMOS technology makes these devices ideal for low power nonvolatile memory applications. The 93LC66A/B is available in standard 8-pin DIP, surface mount SOIC, and TSSOP packages. The 93LC66AX/BX are only offered in a 150-mil SOIC package.
33793 33742 33742S 33887 33888 datasheet
33793 3361 336EGW 33661 33702 33742 33742S 33887 33888 more detail http://www.chinaicmart.com/series-337/33793.html
Distributed System Interface (DSI) Sensor Interface
The 33793 is a slave Distributed System Interface (DSI) device that is optimized as a sensor interface. The device contains circuits to power sensors such as accelerometers and to digitize the analog level from the sensor. The device is controlled by commands over the DSI bus and returns measured data over the bus.
Features • 4-Channel, 8-Bit Analog-to-Digital Converter (ADC) • 4 Pins Configurable as Analog or Logic Inputs or as Logic Outputs • Provides Regulated +5.0 V Output for Sensor Power from Bus • Additional High-Drive Logic Output • Undervoltage Fault Detection and Signaling • On-Board Clock (No External Elements Required) • Field-Programmable Address • Default and Field-Programmable as a DSI Daisy Chain Device • Recognizes Reverse Initialization for Open Bus Fault Tolerance • Detects Short to Battery on Bus Switch and Prevents Its Closure
3PMT75A 3PMT78A 3PMT8.0A 3PMT8.5A datasheet
more detail http://www.chinaicmart.com/series-3PM/3PMT75A.html
3PMT75A 3PMT78A 3PMT8.0A 3PMT8.5A 3PMT9.0A 3PMT90A 3PMT170A 3R1000R
3PMT75A description
These 1500 watt transient voltage suppressors offer power-handling capabilities only found in larger packages. They are most often used for protecting against transients from inductive switching environments or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. With very fast response times, they are also effective in protection from ESD or EFT. Powermite® package features include a full metallic bottom that eliminates the possibility of solder-flux entrapment during assembly. They also provide unique locking tab acting as an integral heat sink. With its very short terminations, parasitic inductance is minimized to reduce voltage overshoots during fast-rise-time transients
VNV35N07 VNW35NV04 VNW100N04 VNW50N04 VOP0300B
VNW50N04A datesheet
http://www.chinaicmart.com/series-VNW/VNW50N04A.html
DESCRIPTION The VNW50N04A is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.
NX8566LE811-CC NX8566LE862-CC NX8566LE820-BC NX8566LE6074-CC datasheet
NX8566LE811-CC datasheet http://www.chinaicmart.com/series-NX8/NX8566LE811-CC.html
NX8566LE811-CC description
NEC's NX8564/8565/8566LE Series is an Electro-Absorption (EA) modulator integrated, 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode. The module is capable of 2.5 Gb/s applications of over 360 km, 600 km, 240 km ultralong-reach and available for Dense Wavelength Division Multiplexing (DWDM) wavelengths based on ITU-T recommendations, enabling a wide range of applications.
2021-1310-00 2025-6001-06 2025-6002-10 datasheet
Available IC model 2021-1310-00 2025-6001-06 2025-6002-10 2SK2002-01MR 2025-6004-20 2SC5004-T1 2025-6005-06 2SC5005-T1 2025-6006-10 2025-6009-06 2025-6013-06 2SC5013-T1 2SC5013-T2 2025-6014-10 2SC5014-T1
Features
Flat Frequency Response Frequency Range: 0.5-18 GHz Multi-Octave Bandwidths Temperature Range: -54 to +125°C Meets MIL-E-5400 Environments
more detail from http://www.qooic.com/detail-2025-6004-20.html
IDT54FCT646CTEB datasheet
IDT54FCT646CTEB datasheet more detail check from http://www.chinaicmart.com/series-IDT/IDT54FCT646CTEB.html
DESCRIPTION: The FCT646T/FCT2646T/FCT648T/FCT652T/2652T consist of a bus transceiver with 3-state D-type flip-flops and control circuitry arranged for multiplexed transmission of data directly from the data bus or from the internal storage registers. The FCT652T/FCT2652T utilize GAB and GBA signals to control the transceiver functions. The FCT646T/FCT2646T/FCT648T utilize the enable control (G) and direction (DIR) pins to control the transceiver functions. SAB and SBA control pins are provided to select either realtime or stored data transfer. The circuitry used for select control will eliminate the typical decoding glitch that occurs in a multiplexer during the transition between stored and realtime data. A LOW input level selects real-time data and a HIGH selects stored data. Data on the A or B data bus, or both, can be stored in the internal D flip-flops by LOW-to-HIGH transitions at the appropriate clock pins (CPAB or CPBA), regardless of the select or enable control pins. The FCT26xxT have balanced drive outputs with current limiting resistors. This offers low ground bounce, minimal undershoot and controlled output fall times-reducing the need for external series terminating resistors. FCT2xxxT parts are plug-in replacements for FCTxxxT parts.
PHP45NQ10T PHP3055 PHP3055E PHP30NQ15T datasheet
PHP45NQ10T PHP3055 PHP3055E PHP30NQ15T datasheet more detail check from
N-channel TrenchMOSÔ transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T
FEATURES
• ’Trench’ technology • Very low on-state resistance
• Fast switching • Low thermal resistance
GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • d.c. to d.c. converters • switched mode power supplies The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB45NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHW45NQ10T is supplied in the SOT429 (TO247) conventional leaded package.